Master Thesis - Novel RF Transistor Technologies for (Sub-)Milllimeter Wavelength Power Amplifiers

Stellenbeschreibung:

At the Fraunhofer Institute for Applied Solid State Physics we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor‑made synthetic diamonds. Whether high‑frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow's technology in‑house for a sustainable and secure society. When will you join us?

Future wireless communication systems push towards higher frequencies to achieve higher data rates. A critical component of such systems is the transmit power amplifier, which must provide the transmit power at frequencies around 300 GHz. High‑electron‑mobility transistors (HEMTs) based on InGaAs are well suited to implement power amplifiers at 300 GHz. Those HEMTs are currently limited in the operating bias voltage, which consequently restricts the achievable output power. Fraunhofer IAF investigates new innovative InGaAs HEMT devices with improved voltage breakdown and excellent high frequency properties. The focus of this thesis will be the characterization and modeling of HEMTs that utilize a backside field plate to increase the bias voltage and subsequently the output power at 300 GHz.

What you will do

Electrically characterize and analyze novel transistor technologies with backside field plate to generate power at millimeter wave frequencies.
Measure on wafer, including DV, breakdown, S‑parameter and load‑pull measurements of various device geometries and epitaxial variations.
Technological computer‑aided design (TCAD) to analyze breakdown mechanisms.
Benchmark the RF device performance by small‑signal analysis.
Analyze data from different transistor variations based on measurement and model data to optimize future HEMT technologies.

What you bring to the table

Enrolled student in the field of electrical engineering, physics, microsystems technology or a similar subject.
Knowledge in the field of (high frequency) electronics and semiconductor components.
Experience in programming with Python for data analysis.
Ideally, first experiences with Keysight Advanced Design System (ADS) or Keysight ICCAP.
Good English skills.
Enjoyment of experimental and scientific work.
Team spirit, openness, and motivation for independent and goal‑oriented work.

What you can expect

Most modern research infrastructure with unique facilities along the entire value chain.
Personal mentoring on an equal footing and support from scientists and experts throughout your thesis.
Flexible time management that fits your studies.
Collaboration in an interdisciplinary team, including working on current projects with clear objectives.
An open and team‑oriented corporate culture that offers you the opportunity to contribute your own ideas.
Diverse and exciting tasks in the environment of an internationally renowned research institution.
Frelo station (bike renting system) and parking spaces with charging stations.

The position is initially limited to 6 months. The monthly working time is 40 hours. We value and promote the diversity of our employees’ skills and therefore welcome all applications – regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Remuneration according to the general works agreement for employing assistant staff.

With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future.