GaN Technology Development Engineer (M/F/D)

In this role you will advance GaN technology platforms for high-performance power electronics, moving concepts into pilot and high-volume production. You will work with device, process integration and reliability teams to improve performance, yield and manufacturability. You will design experiments, analyse data and conduct root-cause investigations to tackle reliability and process challenges. The role offers cross-functional collaboration across international teams and opportunities to shape next-generation GaN devices and manufacturing processes. This is a hands-on, impact-driven position at a leading GaN technology group.

• Drive development and optimisation of GaN technology platforms for power semiconductor applications
• Design, execute and analyse development experiments using Design of Experiments (DOE) methodologies
• Develop and improve process flows, device architectures and fabrication modules to enhance device performance and manufacturability
• Perform electrical characterization and data analysis to evaluate device behaviour, reliability and yield performance
• Investigate process and device-related challenges through root cause analysis and failure analysis techniques
• Collaborate closely with process integration, device engineering, reliability, product engineering and manufacturing teams
• Support qualification activities and the industrialisation of new technologies
• Transfer new GaN technologies from R&D into pilot and high-volume manufacturing environments
• Define test structures and characterisation methodologies to accelerate technology learning cycles
• Contribute to continuous improvement initiatives related to yield, reliability and process capability
• Document development results and communicate findings to technical stakeholders across international teams

• MSc or PhD in Electrical Engineering, Physics, Materials Science, Microelectronics or a related discipline
• Experience in semiconductor technology development, process development or process integration
• Understanding of GaN, III-V, power semiconductor or wide bandgap technologies
• Knowledge of semiconductor fabrication processes including lithography, etch, deposition, metallisation and passivation
• Experience performing electrical characterisation and data analysis
• Familiarity with statistical methods and DOE approaches
• Strong problem-solving skills and ability to work in multidisciplinary development environments
• Excellent communication skills in an international setting

• strong problem-solving abilities
• effective communication in international settings
• multidisciplinary collaboration
• GaN technology development
• III-V and wide bandgap semiconductors
• power semiconductor fabrication processes (lithography, etch, deposition, metallisation, passivation)