Huawei

Senior/Principle Engineer - Power Semiconductors Definition and Reliability

Stellenbeschreibung:

Overview

In this role you contribute to the development of a reliability platform for power devices and shape the roadmap for next‑gen semiconductors. You will produce insights on technology trends and collaborate with European institutions to advance device reliability. Your work supports Huawei’s digital power initiatives across PV, data centers, EVs, and embedded power. You will engage in feasibility studies and help translate complex device physics into robust, scalable solutions. This is a high-impact role at the Ohm Research Center, blending research excellence with industry collaboration.

Leistungen / Benefits
  • company canteen with diverse meals
  • training opportunities
  • language courses (German and Mandarin)
  • dynamic, diverse workplace with ~40 nationalities
  • self‑responsible work in a growing team
Verantwortungsbereiche
  • Develop reliability platform for power devices (Si, GaN, DrMOS) and propose characterization methods
  • Participate in roadmap planning for power devices at headquarters
  • Contribute to specification definitions for roadmap devices
  • Produce insight reports on technology trends and industry roadmaps for power devices
  • Perform feasibility analyses of new cutting-edge concepts in power device development
  • Build and maintain collaborations with European industrial institutions and universities
Zentrale Anforderungen
  • Ph.D. in Materials Science and Engineering (or related) with at least 2 years R&D post‑graduation, or M.Sc. with several years of advanced R&D experience
  • Proven technical portfolio with patents, peer‑reviewed publications, or open‑source projects
  • Solid experience in power semiconductor development
  • Proven ability in reliability analysis and failure analysis of power semiconductors
  • Expertise in power semiconductor physics and process flows
  • Deep knowledge of dynamic switching and parasitic interactions in Si/GaN power stages
  • Ability to map non‑linear device parasitics and gate charge dynamics to VRM efficiency, ringing, and reliability margins
  • Expertise in Double Pulse Testing (DPT), dynamic Rdson testing, and high‑frequency, high‑bandwidth measurement techniques
  • Knowledge of high‑frequency, high‑current DC‑DC converters and VRM applications
  • Experience representing the research center at internal/external events (conferences, workshops)
  • Fluent English communication skills
  • team collaboration
  • effective communication
  • international collaboration
  • reliability analysis
  • failure analysis
  • power semiconductor physics
NOTE / HINWEIS:
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Stelleninformationen

  • Veröffentlichungsdatum:

    07 Nov 2026
  • Standort:

    Nürnberg

    Einsatzort:

    Dusseldorf (Germany) or Hague (Netherlands)
  • Typ:

    Vollzeit
  • Arbeitsmodell:

    Vor Ort
  • Kategorie:

  • Erfahrung:

    2+ years
  • Arbeitsverhältnis:

    Angestellt

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