Staff/Principal GaN Process Development Engineer 1

Staff/Principal GaN Process Development Engineer 1

X-FAB is looking for an experienced Staff/Principal GaN / Wide Band Gap Process Development Engineer to join our global Process Development organization in Dresden, Germany. In this senior technical role, you will provide technical leadership for the development and industrialization of advanced GaN / Wide Band Gap technologies and work closely with international and interdisciplinary teams across X-FAB.

Your pitch

• Lead the development of GaN / Wide Band Gap semiconductor devices and processes.
• Define device architectures, process flows and technology concepts.
• Perform and guide TCAD simulation, DoE and electrical characterization.
• Drive process integration from development toward manufacturing readiness.
• Identify technical risks and define solutions for complex development challenges.
• Provide technical expertise and support to customers and external partners.
• Lead complex development projects across interdisciplinary and international teams.
• Mentor engineers and contribute to the GaN / Wide Band Gap technology roadmap.

Your profile

• Master’s degree and PhD level in the field of electrical engineering, microelectronics or related fields
• Minimum of 5 years extensive experience in development, functionality, manufacturing, characterization and application of GaN / Wide Band Gap semiconductor devices.
• Strong expertise in wafer processing, process integration and electrical characterization.
• Experience in the development environment for the automotive industry
• Enjoy teamwork in a multicultural work environment.
• Interest in the development of modern semiconductor devices with the highest quality standards.
• Strong project management skills and experience.
• Strong communication skills in an international environment.