GaN Process Development Engineer

In this role you develop GaN/Wide Band Gap devices and processes, shaping integrated semiconductor flows and architectures. You will work across an international team to drive TCAD simulations, DoE-driven experiments, and test-structure design, delivering reliable device performance. You’ll contribute to process integration, electrical characterization, and customer support, collaborating with external partners. This position offers opportunities to influence high-quality, automotive-grade device development in a global setting.

• Develop GaN/WBG semiconductor devices and processes
• Define semiconductor process flows and device architectures
• TCAD simulation of devices and processes
• Design, implement and evaluate experiments using DoE
• Develop and design test structures
• Electrical characterization of GaN/WBG devices
• Process integration with other departments
• Provide technical support to customers
• Collaborate with external partners
• Manage development projects in interdisciplinary, international teams

• Master’s degree in electrical engineering, microelectronics or related fields
• Minimum 3 years of experience in GaN/WBG device development, functionality, manufacturing, characterization and application
• Experience with GaN/WBG wafer processes
• Desirable: development experience in automotive industry
• Teamwork in multicultural environment
• Interest in high-quality semiconductor device development
• Project management experience
• Strong communication in international environment

• Teamwork in multicultural environments
• Strong communication in international settings
• Project management
• GaN / Wide Band Gap semiconductor devices
• GaN/WBG wafer processes
• TCAD simulation