Lead Principal Engineer Device Development RF-GaN (w/m/div)

Stellenbeschreibung:

Shape the future: Development of leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover

Creativity: Implementation of novel process and device concepts for next-generation RF-GaN/Si technology platforms

Data is everything: Optimization of device performance and reliability as well as development of required characterization methods

Stakeholder management: Coordination with project management, process development, characterization, product design and customers

Teamwork makes the dream work: Collaboration within an international multi-site environment

Take responsibility: Advancement of RF-GaN/Si device technology development with a focus on high-performance applications

Degree: You hold a Master's degree or PhD in Microelectronics, Electrical Engineering or Physics

Work experience: You bring more than 10 years of experience in GaN device technology development

Personality: You demonstrate a high level of initiative, self-motivation, result orientation and a proactive mindset

Working style: You contribute strong team player skills and a clear focus on achieving results and moving forward

Skills: You possess in-depth GaN device knowledge for RF applications as well as a strong background in semiconductor physics and technology

Languages: You communicate confidently in English and can present complex topics effectively

We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion. We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity. Our hiring decisions are based on skills and experience. Even if you don't meet every requirement, we encourage you to apply. Please let your recruiter know if you need any accommodations during the interview process. Learn more about our various contact channels and about Diversity & Inclusion at Infineon.

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Stelleninformationen

  • Veröffentlichungsdatum:

    12 Sep 2026
  • Standort:

    Regensburg

    Einsatzort:

    Warstein, Deutschland
  • Typ:

    Vollzeit
  • Arbeitsmodell:

    Vor Ort
  • Kategorie:

  • Erfahrung:

    2+ years
  • Arbeitsverhältnis:

    Angestellt

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