(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

In this senior role, you will lead the architecture, modeling, and optimization of GaN power devices to deliver high-performance, manufacturable solutions. You’ll drive TCAD-driven design and collaborate with process, reliability, and product teams to industrialize robust concepts. You will shape device concepts that balance performance, reliability, and manufacturability, contributing to the growth of our GaN team. This role offers impact at scale in a global organization.

• Define and optimize GaN device architectures
• Own performance targets and trade-offs across performance, reliability, and manufacturability
• Lead TCAD simulation, modeling, and design to support tech and product development
• Collaborate with process, characterization, reliability, and product engineering teams
• Contribute to industrialization by delivering robust, scalable device concepts

• MSc/PhD or equivalent in semiconductor physics, electrical engineering, or related field
• Proven GaN or wide bandgap device development experience
• Strong expertise in device physics, TCAD simulation, and semiconductor design
• Track record of leading multidisciplinary technical projects
• Analytical, self-driven, collaborative mindset in an international environment

• analytical
• collaborative
• self-driven
• GaN/wide bandgap device development
• device physics
• TCAD simulation