Research Associate - Design and Simulation of GaN Devices (all genders)

The Fraunhofer Institute for Silicon Technology ISIT offers a future‑oriented research and production environment for about 190 employees and several site partners in Itzehoe. With a technology‑oriented equipment park, two clean rooms and approximately 700 m² of laboratory space, ISIT serves as an enabler between research, development and commercial application. Our “Power Electronics” business area focuses on the development of gallium nitride‑based processes and devices, including lateral AlGaN/GaN HEMTs, vertical GaN MOSFETs and diodes, GaN‑based MEMS, sensors and microelectronic devices, and process development for reliable production.

Be part of change

• Conceptualization and design of innovative GaN‑based devices using commercial and open‑source EDA software
• Conceptualization of control measurements for the in‑line characterization of novel devices during production
• Simulation and calibration of processes and device properties using TCAD
• Supervision of students during the design and simulation of building elements
• Independent processing of work packages within forward‑looking research projects with various internal and external actors from industry and research
• Documentation and communication of the results internally as well as to customers and capitalization of the results through publications and patents

What You Contribute

• Completed scientific university degree (Master’s/Diploma/Doctorate) in physics, electrical engineering, materials science, or a comparable discipline
• Knowledge of semiconductor manufacturing technologies and processes, preferably GaN‑specific
• Knowledge of device development and process and device simulation (TCAD)
• Advantageous: Experience in the (materials science) characterization of semiconductor processes and devices
• Proficiency in written and spoken English and German
• A high degree of independence, initiative and commitment
• The ability to quickly familiarize yourself with new challenges and thrive while taking on responsibility in a team environment

What We Offer

• Flexible working hours and support in balancing private and professional life
• 30 days of vacation per year as well as time off on bridge days and between Christmas and New Year
• Occupational health management and company pension scheme (VBL)
• Corporate benefits
• Subsidy for the Deutschlandjobticket
• Free employee parking
• Internal and external training opportunities
• Space for independent work and active participation in shaping the future through your own ideas
• Direct communication and flat hierarchies for a smooth workflow

The weekly working time is 39 hours. The position is initially limited to two years; however, we are interested in long‑term cooperation. We value and promote the diversity of our employees’ skills and therefore welcome all applications – regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. For applicants with disabilities, we work together to find solutions that best promote their abilities. Appointment, remuneration and social security benefits are based on the public‑sector collective wage agreement (TVöD).

Ready for a change? Then apply now and make a difference! Once we have received your online application, you will receive an automatic confirmation of receipt. We will then get back to you as soon as possible and let you know what happens next.

For technical questions about this position, please contact Mr. Dr. Simon Fichtner ( ). For questions about the recruiting process, please contact Ms Vivien Wilkens ( ). Fraunhofer Institute for Silicon Technology ISIT, Requisition Number: 83011. Application Deadline: 03/31/2026.