Lead Principal Engineer Device Development RF-GaN (w/m/div)

In this role, you lead the development of RF-GaN/Si device technologies from concept to production handover, shaping next-generation RF power solutions. You will collaborate with international experts to drive performance, reliability, and novel device concepts. You address technical challenges across the value chain and contribute to Infineon’s mission for green and secure mobility, energy efficiency, and smart IoT. This is a uniquely technical role with a strong impact on product readiness and cross-site collaboration.

• Shape future RF-GaN/Si device technologies from concept to production handover
• Implement novel process and device concepts for RF-GaN/Si platforms
• Optimize device performance and reliability; develop characterization methods
• Coordinate with project management, process development, characterization, product design and customers
• Collaborate within an international multi-site environment
• Advance RF-GaN/Si device technology for high-performance applications

• Master's degree or PhD in Microelectronics, Electrical Engineering or Physics
• 10+ years of GaN device technology development experience
• Strong initiative, self-motivation, result orientation and proactive mindset
• Excellent team player with focus on achieving results
• In-depth GaN device knowledge for RF applications; strong background in semiconductor physics and technology
• Fluent English; ability to present complex topics effectively

• initiative
• self-motivation
• result orientation
• GaN device knowledge for RF applications
• semiconductor physics and technology
• RF power device concepts